STL18N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.35mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

240m Ω @ 7.5A, 10V

Fall Time (Typ) :

11 ns

Turn-Off Delay Time :

9 ns

Radiation Hardening :

No

Base Part Number :

STL18

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Series :

MDmesh™ V

Transistor Element Material :

SILICON

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

25V

Factory Lead Time :

17 Weeks

Mount :

Surface Mount

Vgs (Max) :

±25V

Rise Time :

7ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

57W Tc

Height :

1mm

Length :

5.4mm

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Package / Case :

8-PowerVDFN

Power Dissipation :

57W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

15A

Number of Pins :

8

Turn On Delay Time :

36 ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Case Connection :

DRAIN

Resistance :

240mOhm