STL10N60M2
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- Mfr.Part #
- STL10N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.5A PWRFLAT56
- Stock
- 3,977
- In Stock ：
- 3,977
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 26 Weeks
- Packaging :
- Cut Tape (CT)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Series :
- MDmesh™ II Plus
- Number of Pins :
- 8
- Base Part Number :
- STL10
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 660m Ω @ 2.5A, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Package / Case :
- 8-PowerVDFN
- Rise Time :
- 8ns
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 48W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 580mOhm
- Fall Time (Typ) :
- 13.2 ns
- Continuous Drain Current (ID) :
- 5.5A
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 100V
- Operating Temperature :
- 150°C TJ
- Turn On Delay Time :
- 8.8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 32.5 ns
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 13.5nC @ 10V
- Datasheets
- STL10N60M2
N-Channel Cut Tape (CT) 660m Ω @ 2.5A, 10V ±25V 400pF @ 100V 13.5nC @ 10V 8-PowerVDFN
STL10N60M2 Overview
A device's maximum input capacitance is 400pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL10N60M2 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 32.5 ns
STL10N60M2 Applications
There are a lot of STMicroelectronics
STL10N60M2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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