STL15N65M5
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- Mfr.Part #
- STL15N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A POWERFLAT
- Stock
- 7,262
- In Stock ：
- 7,262
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 30 ns
- Series :
- MDmesh™ V
- Power Dissipation :
- 52W
- Fall Time (Typ) :
- 12.5 ns
- Vgs (Max) :
- ±25V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Base Part Number :
- STL15
- Package / Case :
- 8-PowerVDFN
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 650V
- Continuous Drain Current (ID) :
- 10A
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 375m Ω @ 5A, 10V
- Resistance :
- 375mOhm
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Packaging :
- Tape and Reel (TR)
- Length :
- 5.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 8
- Rise Time :
- 8ns
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Height :
- 1mm
- Turn-Off Delay Time :
- 11 ns
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 52W Tc
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Factory Lead Time :
- 17 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STL15N65M5
N-Channel Tape & Reel (TR) 375m Ω @ 5A, 10V ±25V 816pF @ 100V 22nC @ 10V 8-PowerVDFN
STL15N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 816pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STL15N65M5 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 11 ns
STL15N65M5 Applications
There are a lot of STMicroelectronics
STL15N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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