STL110N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

950μm

Element Configuration :

Single

Vgs (Max) :

±20V

Turn On Delay Time :

25 ns

Length :

5.4mm

Number of Elements :

1

Base Part Number :

STL110

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

6m Ω @ 10A, 10V

Width :

6.35mm

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

107A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

5

Series :

DeepGATE™, STripFET™ VII

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Case Connection :

DRAIN

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

8-PowerVDFN

Fall Time (Typ) :

21 ns

Continuous Drain Current (ID) :

107A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Resistance :

6mOhm

Power Dissipation-Max :

136W Tc

Turn-Off Delay Time :

52 ns

Input Capacitance (Ciss) (Max) @ Vds :

5117pF @ 50V

JESD-30 Code :

R-PDSO-F5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

36ns

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Power Dissipation :

5W

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

490 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Transistor Element Material :

SILICON