STF9NM60N
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- Mfr.Part #
- STF9NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.5A TO220FP
- Stock
- 8,970
- In Stock ：
- 8,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 17.4nC @ 10V
- Continuous Drain Current (ID) :
- 6.5A
- Power Dissipation-Max :
- 25W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 26A
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Base Part Number :
- STF9
- Drain to Source Breakdown Voltage :
- 600V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Rise Time :
- 23ns
- Length :
- 10.4mm
- Factory Lead Time :
- 16 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- MDmesh™ II
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 52.5 ns
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package / Case :
- TO-220-3 Full Pack
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 745m Ω @ 3.25A, 10V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Height :
- 16.4mm
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Width :
- 4.6mm
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 28 ns
- Fall Time (Typ) :
- 26.7 ns
- Resistance :
- 745mOhm
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 452pF @ 50V
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3V
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Power Dissipation :
- 25W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- STF9NM60N
STF9NM60N Documents
N-Channel Tube 745m Ω @ 3.25A, 10V ±25V 452pF @ 50V 17.4nC @ 10V TO-220-3 Full Pack
STF9NM60N Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 452pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [9A] according to its drain current.It is [52.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 26A.A turn-on delay time of 28 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF9NM60N Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 52.5 ns
based on its rated peak drain current 26A.
a threshold voltage of 3V
STF9NM60N Applications
There are a lot of STMicroelectronics
STF9NM60N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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