STF9N60M2
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- Mfr.Part #
- STF9N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.5A TO220FP
- Stock
- 3,971
- In Stock ：
- 3,971
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 22 ns
- Package / Case :
- TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 20W Tc
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 5.5A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Length :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 16 Weeks
- Base Part Number :
- STF9
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Height :
- 16.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ II Plus
- Width :
- 4.6mm
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 780m Ω @ 3A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Rise Time :
- 7.5ns
- Fall Time (Typ) :
- 13.5 ns
- Turn On Delay Time :
- 8.8 ns
- Operating Temperature :
- 150°C TJ
- Datasheets
- STF9N60M2
N-Channel Tube 780m Ω @ 3A, 10V ±25V 320pF @ 100V 10nC @ 10V 600V TO-220-3 Full Pack
STF9N60M2 Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
STF9N60M2 Features
Extremely low gate charge
Lower RDS(on) x area vs the previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
STF9N60M2 Applications
Switching applications
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