STF9NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 50V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Number of Terminations :

3

Power Dissipation :

25W

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

560m Ω @ 3.7A, 10V

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Series :

MDmesh™

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Height :

9.3mm

Mount :

Through Hole

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.56Ohm

Length :

10.4mm

Continuous Drain Current (ID) :

7.5A

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

45 ns

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Packaging :

Tube

Base Part Number :

STF9

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Rise Time :

16ns

Number of Pins :

3

Fall Time (Typ) :

19 ns

Power Dissipation-Max :

25W Tc

Current - Continuous Drain (Id) @ 25°C :

5A Tc