STF7NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Elements :

1

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

26 ns

Packaging :

Tube

Continuous Drain Current (ID) :

5A

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Series :

MDmesh™ II

Power Dissipation :

20W

Threshold Voltage :

3V

Pulsed Drain Current-Max (IDM) :

20A

REACH SVHC :

No SVHC

Base Part Number :

STF7N

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Element Configuration :

Single

Length :

10.4mm

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Number of Terminations :

3

Package / Case :

TO-220-5 Full Pack

Radiation Hardening :

No

Vgs (Max) :

±25V

Pin Count :

3

ECCN Code :

EAR99

Power Dissipation-Max :

20W Tc

Resistance :

900mOhm

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Rise Time :

10ns

Operating Temperature :

150°C TJ

Height :

16.4mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 50V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE