STF7N60M2
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- Mfr.Part #
- STF7N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO220FP
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 19.3 ns
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Rise Time :
- 7.2ns
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Base Part Number :
- STF7N
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Series :
- MDmesh™ II Plus
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Packaging :
- Tube
- Width :
- 4.6mm
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 271pF @ 100V
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 2.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 16.4mm
- Gate to Source Voltage (Vgs) :
- 25V
- Fall Time (Typ) :
- 15.9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 10V
- Power Dissipation-Max :
- 20W Tc
- Turn On Delay Time :
- 7.6 ns
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Datasheets
- STF7N60M2
STF7N60M2 Documents
N-Channel Tube 950m Ω @ 2.5A, 10V ±25V 271pF @ 100V 8.8nC @ 10V 600V TO-220-3 Full Pack
STF7N60M2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 271pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 19.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STF7N60M2 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 19.3 ns
a 600V drain to source voltage (Vdss)
STF7N60M2 Applications
There are a lot of STMicroelectronics
STF7N60M2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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