STF7N65M2
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- Mfr.Part #
- STF7N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5A TO220FP
- Stock
- 17,315
- In Stock ：
- 17,315
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 5A
- Number of Channels :
- 1
- Turn On Delay Time :
- 8 ns
- Mounting Type :
- Through Hole
- Series :
- MDmesh™
- Packaging :
- Tube
- Base Part Number :
- STF7N
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 329.988449mg
- Rise Time :
- 20ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 30 ns
- Resistance :
- 980mOhm
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Rds On (Max) @ Id, Vgs :
- 1.15 Ω @ 2.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 16 Weeks
- Vgs (Max) :
- ±25V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 20W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STF7N65M2
N-Channel Tube 1.15 Ω @ 2.5A, 10V ±25V 270pF @ 100V 9nC @ 10V TO-220-3 Full Pack
STF7N65M2 Overview
A device's maximal input capacitance is 270pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STF7N65M2 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
STF7N65M2 Applications
There are a lot of STMicroelectronics
STF7N65M2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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