STF4N80K5
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- Mfr.Part #
- STF4N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3A TO220FP
- Stock
- 9,900
- In Stock ：
- 9,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 36 ns
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 74.5 mJ
- Height :
- 16.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 100V
- DS Breakdown Voltage-Min :
- 800V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 20W Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Number of Elements :
- 1
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Fall Time (Typ) :
- 21 ns
- Length :
- 10.4mm
- Width :
- 4.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 800V
- Mount :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Series :
- SuperMESH5™
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Base Part Number :
- STF4N
- Drain Current-Max (Abs) (ID) :
- 3A
- Continuous Drain Current (ID) :
- 3A
- Resistance :
- 2.5Ohm
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.5A, 10V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 16.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- STF4N80K5
N-Channel Tube 2.5 Ω @ 1.5A, 10V ±30V 175pF @ 100V 10.5nC @ 10V 800V TO-220-3 Full Pack
STF4N80K5 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 74.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF4N80K5 Features
the avalanche energy rating (Eas) is 74.5 mJ
a continuous drain current (ID) of 3A
the turn-off delay time is 36 ns
a 800V drain to source voltage (Vdss)
STF4N80K5 Applications
There are a lot of STMicroelectronics
STF4N80K5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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