STF4N62K3
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- Mfr.Part #
- STF4N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 3.8A TO220FP
- Stock
- 5,900
- In Stock ：
- 5,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 3.8A
- Pulsed Drain Current-Max (IDM) :
- 15.2A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Width :
- 4.6mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 25W Tc
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 25W
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 620V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STF4N
- Series :
- SuperMESH3™
- Resistance :
- 2Ohm
- Height :
- 16.4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 19 ns
- Case Connection :
- Isolated
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Rise Time :
- 9ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 50V
- Length :
- 10.4mm
- Threshold Voltage :
- 3.75V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.9A, 10V
- Turn-Off Delay Time :
- 29 ns
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Mount :
- Through Hole
- Datasheets
- STF4N62K3
N-Channel Tube 2 Ω @ 1.9A, 10V ±30V 550pF @ 50V 22nC @ 10V TO-220-3 Full Pack
STF4N62K3 Overview
A device's maximal input capacitance is 550pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 15.2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF4N62K3 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 15.2A.
a threshold voltage of 3.75V
STF4N62K3 Applications
There are a lot of STMicroelectronics
STF4N62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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