STF4N52K3
- Mfr.Part #
- STF4N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 2.5A TO220FP
- Stock
- 35,785
- In Stock :
- 35,785
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 1.25A, 10V
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Resistance :
- 2.6Ohm
- FET Type :
- N-Channel
- Length :
- 7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 334pF @ 100V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 2.5A
- Height :
- 2.4mm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Width :
- 6.6mm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Fall Time (Typ) :
- 14 ns
- Drain to Source Breakdown Voltage :
- 525V
- Mount :
- Surface Mount, Through Hole
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation :
- 20W
- Turn-Off Delay Time :
- 21 ns
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Threshold Voltage :
- 3.75V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 20W Tc
- Series :
- SuperMESH3™
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-252
- Turn On Delay Time :
- 8 ns
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Base Part Number :
- STF4N
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- STF4N52K3

N-Channel Tube 2.6 Ω @ 1.25A, 10V ±30V 334pF @ 100V 11nC @ 10V TO-220-3 Full Pack
STF4N52K3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 334pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 525V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 525V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.In addition to reducing power consumption, this device uses drive voltage (10V).
STF4N52K3 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3.75V
STF4N52K3 Applications
There are a lot of STMicroelectronics
STF4N52K3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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