STF35N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Base Part Number :

STF35N

Vgs (Max) :

±25V

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 100V

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

98m Ω @ 13.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Through Hole

Rise Time :

12ns

Resistance :

98mOhm

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

800 mJ

Fall Time (Typ) :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Turn On Delay Time :

60 ns

Pin Count :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

27A

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

60 ns

Case Connection :

Isolated

Power Dissipation-Max :

40W Tc

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

3

Element Configuration :

Single

Transistor Application :

SWITCHING

Series :

MDmesh™ V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Operating Temperature :

150°C TJ

Mount :

Through Hole

Height :

16.4mm

Packaging :

Tube

Number of Elements :

1

Power Dissipation :

40W