STF30N65M5
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- Mfr.Part #
- STF30N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO220FP
- Stock
- 5,664
- In Stock ：
- 5,664
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Base Part Number :
- STF30N
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 22A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Length :
- 10.4mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Fall Time (Typ) :
- 10 ns
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 100V
- Turn On Delay Time :
- 50 ns
- Mount :
- Through Hole
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs (Max) :
- ±25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Resistance :
- 139mOhm
- Width :
- 4.6mm
- Turn-Off Delay Time :
- 50 ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 139m Ω @ 11A, 10V
- Height :
- 16.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 30W
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 8ns
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 88A
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation-Max :
- 30W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Additional Feature :
- AVALANCHE ENERGY RATED
- Datasheets
- STF30N65M5
N-Channel Tube 139m Ω @ 11A, 10V ±25V 2880pF @ 100V 64nC @ 10V TO-220-3 Full Pack
STF30N65M5 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2880pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 88A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF30N65M5 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 88A.
STF30N65M5 Applications
There are a lot of STMicroelectronics
STF30N65M5 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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