STF30NM50N
- Mfr.Part #
- STF30NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 27A TO220FP
- Stock
- 42,433
- In Stock :
- 42,433
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 60 ns
- Package / Case :
- TO-220-3 Full Pack
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 13.5A, 10V
- Case Connection :
- Isolated
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tube
- Power Dissipation-Max :
- 40W Tc
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 500V
- Qualification Status :
- Not Qualified
- Base Part Number :
- STF30N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±25V
- Power Dissipation :
- 40W
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 115 ns
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Elements :
- 1
- Rise Time :
- 20ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740pF @ 50V
- Series :
- MDmesh™ II
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 27A
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Datasheets
- STF30NM50N

N-Channel Tube 115m Ω @ 13.5A, 10V ±25V 2740pF @ 50V 94nC @ 10V TO-220-3 Full Pack
STF30NM50N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2740pF @ 50V.This device conducts a continuous drain current (ID) of 27A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 115 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STF30NM50N Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 115 ns
STF30NM50N Applications
There are a lot of STMicroelectronics
STF30NM50N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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