STF30NM50N

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Mfr.Part #
STF30NM50N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 27A TO220FP
Stock
42,433
In Stock :
42,433

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
60 ns
Package / Case :
TO-220-3 Full Pack
Pin Count :
3
Rds On (Max) @ Id, Vgs :
115m Ω @ 13.5A, 10V
Case Connection :
Isolated
Terminal Finish :
Matte Tin (Sn) - annealed
Packaging :
Tube
Power Dissipation-Max :
40W Tc
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
25V
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
Mount :
Through Hole
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
27A Tc
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Breakdown Voltage :
500V
Qualification Status :
Not Qualified
Base Part Number :
STF30N
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±25V
Power Dissipation :
40W
Avalanche Energy Rating (Eas) :
900 mJ
Operating Temperature :
150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
115 ns
JEDEC-95 Code :
TO-220AB
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Number of Elements :
1
Rise Time :
20ns
Input Capacitance (Ciss) (Max) @ Vds :
2740pF @ 50V
Series :
MDmesh™ II
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
27A
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Datasheets
STF30NM50N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF30NM50N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Base Part Number:STF30N, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, STF30NM50N pinout, STF30NM50N datasheet PDF, STF30NM50N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF30NM50N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF30NM50N


N-Channel Tube 115m Ω @ 13.5A, 10V ±25V 2740pF @ 50V 94nC @ 10V TO-220-3 Full Pack

STF30NM50N Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2740pF @ 50V.This device conducts a continuous drain current (ID) of 27A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 115 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STF30NM50N Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 115 ns


STF30NM50N Applications


There are a lot of STMicroelectronics
STF30NM50N applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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