STF33N65M2
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- Mfr.Part #
- STF33N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A TO220FP
- Stock
- 9,790
- In Stock ：
- 9,790
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 16.4mm
- Transistor Application :
- SWITCHING
- Width :
- 4.6mm
- Avalanche Energy Rating (Eas) :
- 780 mJ
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 1790pF @ 100V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 34W Tc
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 650V
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- 150°C TJ
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Drain to Source Voltage (Vdss) :
- 650V
- Continuous Drain Current (ID) :
- 24A
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Turn On Delay Time :
- 13.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 41.5nC @ 10V
- Length :
- 10.4mm
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 12A, 10V
- Drain-source On Resistance-Max :
- 0.14Ohm
- Mount :
- Through Hole
- Series :
- MDmesh™ M2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 72.5 ns
- Number of Elements :
- 1
- Base Part Number :
- STF33N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 96A
- Datasheets
- STF33N65M2
N-Channel Tube 140m Ω @ 12A, 10V ±25V 1790pF @ 100V 41.5nC @ 10V 650V TO-220-3 Full Pack
STF33N65M2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 780 mJ.The maximum input capacitance of this device is 1790pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 24A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72.5 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 650V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
STF33N65M2 Features
the avalanche energy rating (Eas) is 780 mJ
a continuous drain current (ID) of 24A
the turn-off delay time is 72.5 ns
based on its rated peak drain current 96A.
a 650V drain to source voltage (Vdss)
STF33N65M2 Applications
There are a lot of STMicroelectronics
STF33N65M2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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