STF32NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

22A

Input Capacitance (Ciss) (Max) @ Vds :

1973pF @ 50V

JESD-609 Code :

e3

Base Part Number :

STF32N

Fall Time (Typ) :

23.6 ns

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

130m Ω @ 11A, 10V

Radiation Hardening :

No

Rise Time :

9.5ns

Number of Elements :

1

Number of Terminations :

3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Number of Pins :

3

Element Configuration :

Single

Series :

MDmesh™ II

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - annealed

Pulsed Drain Current-Max (IDM) :

88A

Power Dissipation-Max :

35W Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

35W

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Turn On Delay Time :

21.5 ns

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

110 ns

Case Connection :

Isolated

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)