STF32N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Height :

16.4mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

RoHS Status :

ROHS3 Compliant

Power Dissipation :

35W

Length :

10.4mm

Transistor Application :

SWITCHING

Width :

4.6mm

Mounting Type :

Through Hole

Pin Count :

3

Mount :

Through Hole

JESD-609 Code :

e3

Rise Time :

12ns

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Series :

MDmesh™ V

ECCN Code :

EAR99

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Turn On Delay Time :

53 ns

Case Connection :

Isolated

Fall Time (Typ) :

16 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Drain to Source Breakdown Voltage :

650V

Additional Feature :

AVALANCHE ENERGY RATED

Power Dissipation-Max :

35W Tc

Continuous Drain Current (ID) :

24A

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

53 ns

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

650 mJ

Number of Pins :

3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

96A

Rds On (Max) @ Id, Vgs :

119m Ω @ 12A, 10V

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STF32N

Radiation Hardening :

No

Vgs (Max) :

±25V

Resistance :

119mOhm

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 100V