STD4NS25T4
- Mfr.Part #
- STD4NS25T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4A DPAK
- Stock
- 1,932
- In Stock :
- 1,932
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 50W
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 12 ns
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 250V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Nominal Vgs :
- 3 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 250V
- Drain Current-Max (Abs) (ID) :
- 4A
- Pin Count :
- 3
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 4A
- Number of Elements :
- 1
- Rise Time :
- 18ns
- Series :
- MESH OVERLAY™
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2A, 10V
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 3V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Dual Supply Voltage :
- 250V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 50W Tc
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Width :
- 6.8mm
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 355pF @ 25V
- Base Part Number :
- STD4N
- Fall Time (Typ) :
- 10.5 ns
- Current Rating :
- 4A
- Datasheets
- STD4NS25T4
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N-Channel Tape & Reel (TR) 1.1 Ω @ 2A, 10V ±20V 355pF @ 25V 27nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD4NS25T4 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 355pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STD4NS25T4 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 12 ns
a threshold voltage of 3V
STD4NS25T4 Applications
There are a lot of STMicroelectronics
STD4NS25T4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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