STD44N4LF6
- Mfr.Part #
- STD44N4LF6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 44A DPAK
- Stock
- 9,593
- In Stock :
- 9,593
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Fall Time (Typ) :
- 8 ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Turn On Delay Time :
- 8.5 ns
- Number of Terminations :
- 2
- Base Part Number :
- STD44
- Radiation Hardening :
- No
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 45ns
- Terminal Form :
- Gull wing
- Power Dissipation :
- 50W
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 20A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Series :
- DeepGATE™, STripFET™ VI
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 44A
- Turn-Off Delay Time :
- 30 ns
- Power Dissipation-Max :
- 50W Tc
- Transistor Element Material :
- SILICON
- Datasheets
- STD44N4LF6
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N-Channel Tape & Reel (TR) 12.5m Ω @ 20A, 10V ±20V 1190pF @ 25V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD44N4LF6 Description
This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
STD44N4LF6 Features
-
Complete avalanche testing
-
Drive logic level
STD44N4LF6 Applications
-
Change of applications
-
Automobile
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