STD45N10F7
- Mfr.Part #
- STD45N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 45A DPAK
- Stock
- 3,836
- In Stock :
- 3,836
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Base Part Number :
- STD45
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- Series :
- DeepGATE™, STripFET™ VII
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 22.5A, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 8 ns
- Number of Terminations :
- 2
- Rise Time :
- 17ns
- Width :
- 6.2mm
- Mount :
- Surface Mount
- Length :
- 6.6mm
- Weight :
- 3.949996g
- Height :
- 2.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Power Dissipation-Max :
- 60W Tc
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Turn-Off Delay Time :
- 24 ns
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Factory Lead Time :
- 52 Weeks
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 45A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 50V
- Turn On Delay Time :
- 15 ns
- Drain to Source Breakdown Voltage :
- 100V
- Datasheets
- STD45N10F7
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N-Channel Tape & Reel (TR) 18m Ω @ 22.5A, 10V 1640pF @ 50V 25nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD45N10F7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1640pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STD45N10F7 Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 24 ns
STD45N10F7 Applications
There are a lot of STMicroelectronics
STD45N10F7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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