STD4NK80Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

12ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Through Hole

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

13 ns

Base Part Number :

STD4N

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Radiation Hardening :

No

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±30V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

80W

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1.5A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Power Dissipation-Max :

80W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

32 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Element Configuration :

Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin (Sn)

Series :

SuperMESH™

Turn-Off Delay Time :

35 ns