STD4NK60Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

29 ns

Turn On Delay Time :

12 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

4A

Base Part Number :

STD4N

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Drain Current-Max (Abs) (ID) :

4A

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Pin Count :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Series :

SuperMESH™

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

2Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Power Dissipation-Max :

70W Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Vgs (Max) :

±30V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Fall Time (Typ) :

16.5 ns

Power Dissipation :

70W

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Rise Time :

9.5ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 50μA