STD4N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation-Max :

60W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Avalanche Energy Rating (Eas) :

74.5 mJ

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Fall Time (Typ) :

21 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

Continuous Drain Current (ID) :

3A

Width :

6.2mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Turn-Off Delay Time :

36 ns

Vgs(th) (Max) @ Id :

5V @ 100µA

Case Connection :

DRAIN

Number of Channels :

1

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

16.5 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Length :

6.6mm

Number of Elements :

1

Mount :

Surface Mount

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

3A

Height :

2.4mm

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Number of Terminations :

2

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

60W

Resistance :

2.5Ohm

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Base Part Number :

STD4N

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.5A, 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Series :

SuperMESH5™