STD4N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Turn-Off Delay Time :

29 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 50V

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rise Time :

9ns

Drain to Source Breakdown Voltage :

620V

Length :

6.6mm

Fall Time (Typ) :

19 ns

Continuous Drain Current (ID) :

3.8A

Base Part Number :

STD4N

Radiation Hardening :

No

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

70W Tc

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Width :

6.2mm

Number of Elements :

1

Height :

2.4mm

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Power Dissipation :

70W

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 1.9A, 10V

Vgs (Max) :

±30V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Series :

SuperMESH3™

Pin Count :

3

Transistor Application :

SWITCHING

Threshold Voltage :

3.75V

Turn On Delay Time :

10 ns

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Resistance :

1.95Ohm

Terminal Form :

Gull wing

REACH SVHC :

No SVHC