STD01P
- Mfr.Part #
- STD01P
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-5
- Datasheet
- Download
- Description
- TRANS PNP DARL 150V 10A TO3P-5L
- Stock
- 1,480
- In Stock :
- 1,480
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 100(W)
- Collector-Base Voltage :
- 150(V)
- Transistor Element Material :
- SILICON
- Power - Max :
- 100W
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 2V
- Pin Count :
- 5
- Lead Free :
- Lead Free
- Base Product Number :
- STD01
- Collector-Emitter Voltage :
- 150(V)
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 10A
- Supplier Device Package :
- TO-3P-5L
- Operating Temp Range :
- -55C to 150C
- Current - Collector (Ic) (Max) :
- 10A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 6A 4V
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Product Status :
- Obsolete
- ECCN Code :
- EAR99
- Published :
- 2007
- Emitter-Base Voltage :
- 5(V)
- Package :
- Bulk
- JESD-30 Code :
- R-PSFM-T4
- Frequency - Transition :
- --
- Rad Hardened :
- No
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 4
- Transistor Type :
- PNP - Darlington
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Terminal Position :
- Single
- Maximum Collector Cut-off Current :
- 100
- Max Power Dissipation :
- 100W
- Polarity/Channel Type :
- PNP
- Polarity :
- PNP
- Package Type :
- TO-3P
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 6mA, 6A
- Operating Temperature Classification :
- Military
- Collector Emitter Breakdown Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Collector Current (DC) :
- 10(A)
- Operating Temperature :
- 150°C TJ
- Mounting :
- Through Hole
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Base-Emitter Saturation Voltage (Max) :
- 2.5@6MA@6A(V)
- Packaging :
- Bulk
- Package / Case :
- TO-3P-5
- Datasheets
- STD01P
PNP - Darlington 150°C TJ 100μA ICBO 1 Elements 4 Terminations SILICON PNP TO-3P-5 Bulk Through Hole
STD01P Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5000 @ 6A 4V.When VCE saturation is 2V @ 6mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-3P-5L contains the product.The device has a 150V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 10A volts can be achieved.
STD01P Features
the DC current gain for this device is 5000 @ 6A 4V
the vce saturation(Max) is 2V @ 6mA, 6A
the supplier device package of TO-3P-5L
STD01P Applications
There are a lot of Sanken
STD01P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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