STB85NF55LT4
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- Mfr.Part #
- STB85NF55LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A D2PAK
- Stock
- 2,140
- In Stock ：
- 2,140
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Current Rating :
- 80A
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn On Delay Time :
- 35 ns
- Series :
- STripFET™ II
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- Peak Reflow Temperature (Cel) :
- 245
- Mount :
- Surface Mount
- Base Part Number :
- STB85N
- Power Dissipation-Max :
- 300W Tc
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±15V
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 55V
- Resistance :
- 8mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 months ago)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 980 mJ
- Fall Time (Typ) :
- 55 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 80A
- Voltage - Rated DC :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 5V
- Rise Time :
- 165ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 4050pF @ 25V
- Power Dissipation :
- 300W
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn-Off Delay Time :
- 70 ns
- Datasheets
- STB85NF55LT4
N-Channel Tape & Reel (TR) 8m Ω @ 40A, 10V ±15V 4050pF @ 25V 110nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB85NF55LT4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 980 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4050pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STB85NF55LT4 Features
the avalanche energy rating (Eas) is 980 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 70 ns
STB85NF55LT4 Applications
There are a lot of STMicroelectronics
STB85NF55LT4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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