STB80PF55T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

40A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

18m Ω @ 40A, 10V

Resistance :

18mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

STripFET™ II

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

300W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Height :

4.6mm

Drain Current-Max (Abs) (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Form :

Gull wing

Voltage - Rated DC :

-60V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

FET Type :

P-Channel

Termination :

SMD/SMT

Width :

9.35mm

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

55V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

-55V

Number of Terminations :

2

Radiation Hardening :

No

Current Rating :

-300mA

Turn-Off Delay Time :

165 ns

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Turn On Delay Time :

35 ns

Nominal Vgs :

3 V

Pbfree Code :

yes

Length :

10.4mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3V

Base Part Number :

STB80P

Pin Count :

4

Mount :

Surface Mount

Rise Time :

190ns

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±16V

Fall Time (Typ) :

80 ns

Time@Peak Reflow Temperature-Max (s) :

30