STB45NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

38A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

10 ns

Pin Count :

3

Base Part Number :

STB45N

Pulsed Drain Current-Max (IDM) :

152A

Input Capacitance (Ciss) (Max) @ Vds :

980pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Terminations :

2

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

not_compliant

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

260 mJ

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

60V

Resistance :

28mOhm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

80W Tc

Mount :

Surface Mount

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs (Max) :

±20V

Lead Free :

Lead Free

Rise Time :

40ns

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

245

Turn-Off Delay Time :

28 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Current Rating :

38A

Mounting Type :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

28m Ω @ 19A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

80W

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Series :

STripFET™ II