STB40NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-50°C~175°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Rise Time :

63ns

Number of Terminations :

2

ECCN Code :

EAR99

Pin Count :

3

Lead Free :

Lead Free

Current Rating :

50A

Radiation Hardening :

No

Length :

10.75mm

Mounting Type :

Surface Mount

Height :

4.6mm

Drain Current-Max (Abs) (ID) :

40A

FET Type :

N-Channel

Width :

10.4mm

Continuous Drain Current (ID) :

50A

Fall Time (Typ) :

28 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Threshold Voltage :

2.8V

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

150W

Series :

STripFET™ II

Turn-Off Delay Time :

84 ns

Pulsed Drain Current-Max (IDM) :

200A

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Resistance :

28mOhm

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

28m Ω @ 25A, 10V

Base Part Number :

STB40N

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

150W Tc

Voltage - Rated DC :

100V

Turn On Delay Time :

28 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

245

RoHS Status :

ROHS3 Compliant