STB42N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

65 ns

Rise Time :

24ns

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Base Part Number :

STB42N

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

79m Ω @ 16.5A, 10V

Threshold Voltage :

4V

Number of Pins :

3

JESD-609 Code :

e3

Width :

10.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

245

Power Dissipation :

190W

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Pin Count :

4

Series :

MDmesh™ V

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Avalanche Energy Rating (Eas) :

950 mJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

13 ns

Vgs (Max) :

±25V

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N-Channel

Resistance :

79mOhm

Operating Temperature :

150°C TJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time :

17 Weeks

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

190W Tc

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Terminal Form :

Gull wing

Length :

10.75mm

Height :

4.6mm

Turn On Delay Time :

61 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

33A