SSTA06T116
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- Mfr.Part #
- SSTA06T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SST3
- Stock
- 5,547
- In Stock ：
- 5,547
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500mA
- Current Rating :
- 500mA
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 80V
- Transistor Type :
- NPN
- Power - Max :
- 350mW
- Collector Emitter Voltage (VCEO) :
- 250mV
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- STA06
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Continuous Collector Current :
- 500mA
- Supplier Device Package :
- SST3
- hFE Min :
- 100
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Published :
- 2007
- Termination :
- SMD/SMT
- Collector Base Voltage (VCBO) :
- 80V
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Min Operating Temperature :
- -55°C
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Max Operating Temperature :
- 150°C
- Datasheets
- SSTA06T116
NPN 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SSTA06T116 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.Product package SST3 comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 500mA volts is possible.
SSTA06T116 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SST3
SSTA06T116 Applications
There are a lot of ROHM Semiconductor
SSTA06T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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