SSTA56T116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-80V

Element Configuration :

Single

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

500mA

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

80V

Collector Emitter Voltage (VCEO) :

80V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Lead Free :

Lead Free

Max Power Dissipation :

350mW

Pin Count :

3

ECCN Code :

EAR99

VCEsat-Max :

0.25 V

Transition Frequency :

50MHz

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

50MHz

Radiation Hardening :

No

Published :

2008

Collector Base Voltage (VCBO) :

80V

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Transistor Type :

PNP

hFE Min :

100

Base Part Number :

STA56

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Number of Elements :

1

Current Rating :

-500mA

Power - Max :

350mW

Current - Collector Cutoff (Max) :

1μA

HTS Code :

8541.21.00.95

Emitter Base Voltage (VEBO) :

4V

Time@Peak Reflow Temperature-Max (s) :

10