SPU08P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.83A Ta

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

-60V

FET Type :

P-Channel

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

70 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Rise Time :

46ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature (Max) :

175°C

Number of Elements :

1

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1999

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.3Ohm

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Mount :

Through Hole

Series :

SIPMOS®

Current Rating :

-8.8A

Pulsed Drain Current-Max (IDM) :

35.32A

ECCN Code :

EAR99

Power Dissipation-Max :

42W Tc

Rds On (Max) @ Id, Vgs :

300m Ω @ 6.2A, 10V

HTS Code :

8541.29.00.95

Continuous Drain Current (ID) :

8.83A