SPU01N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Power Dissipation-Max :

11W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

6Ohm

Drain to Source Voltage (Vdss) :

650V

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™

Surface Mount :

No

Avalanche Energy Rating (Eas) :

20 mJ

Pulsed Drain Current-Max (IDM) :

1.6A

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Published :

2005

Rds On (Max) @ Id, Vgs :

6 Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Mounting Type :

Through Hole

Pbfree Code :

No

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.8A

Number of Terminations :

3

Pin Count :

3