SPP08N80C3
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- Mfr.Part #
- SPP08N80C3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- SPP08N80 - 800V COOLMOS N-CHANNE
- Stock
- 48,288
- In Stock ：
- 48,288
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Width :
- 4.57mm
- Lead Free :
- Contains Lead
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 7 ns
- Continuous Drain Current (ID) :
- 8A
- Surface Mount :
- No
- Halogen Free :
- Halogen Free
- Max Operating Temperature :
- 150°C
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 8A
- Current Rating :
- 8A
- Pin Count :
- 3
- Power Dissipation :
- 104W
- Rds On Max :
- 650 mΩ
- Voltage - Rated DC :
- 800V
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Rise Time :
- 15ns
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.36mm
- Drain to Source Breakdown Voltage :
- 800V
- Pulsed Drain Current-Max (IDM) :
- 24A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 104W
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Turn On Delay Time :
- 25 ns
- Capacitance - Input :
- 1.1nF
- Height :
- 15.95mm
- Package / Case :
- TO-220-3
- Terminal Form :
- THROUGH-HOLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 6 Weeks
- Drain to Source Resistance :
- 650mOhm
- Published :
- 2000
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 65 ns
- Datasheets
- SPP08N80C3
TO-220-3
SPP08N80C3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 650mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.
SPP08N80C3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 650mOhm
SPP08N80C3 Applications
There are a lot of Infineon
SPP08N80C3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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