SPP02N80C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

6A

Drain Current-Max (Abs) (ID) :

2A

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Series :

CoolMOS™

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

90 mJ

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Power Dissipation-Max :

42W Tc

Pin Count :

3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

DS Breakdown Voltage-Min :

800V

Drain to Source Voltage (Vdss) :

800V

Factory Lead Time :

6 Weeks

Terminal Position :

Single

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED