SPP03N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.4 mm

Current - Continuous Drain (Id) @ 25°C :

3.2A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Turn-On Delay Time :

35 ns

Supplier Device Package :

PG-TO220-3-1

Continuous Drain Current Id :

3.2

Power Dissipation (Max) :

38W (Tc)

Max Operating Temperature :

150 °C

Gate to Source Voltage (Vgs) :

20 V

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Channel Type :

N

Package :

Bulk

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Min Operating Temperature :

-55 °C

Power Dissipation :

38

Drain to Source Breakdown Voltage :

600 V

Series :

CoolMOS™

FET Feature :

-

Input Capacitance :

420 pF

FET Type :

N-Channel

Max Power Dissipation :

38 W

Drain to Source Resistance :

1.4 Ω

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

420 pF @ 25 V

Voltage Rating (DC) :

650 V

Product Status :

Active

Current Rating :

3.2 A

Rds On Max :

1.4 Ω

Rise Time :

25 ns

Continuous Drain Current (ID) :

3.2 A

Height :

9.25 mm

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Compliant

Vgs(th) (Max) @ Id :

5.5V @ 135µA

Length :

10 mm