SPP04N50C3XKSA1

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Mfr.Part #
SPP04N50C3XKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220
Datasheet
Download
Description
LOW POWER_LEGACY
Stock
33,211
In Stock :
33,211

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Max Dual Supply Voltage :
500V
Mount :
Through Hole
Min Operating Temperature :
-55°C
RoHS Status :
ROHS3 Compliant
Length :
10.36mm
Width :
4.57mm
Turn On Delay Time :
10 ns
Current Rating :
4.5A
Published :
2005
Input Capacitance :
470pF
Power Dissipation :
50W
Max Power Dissipation :
50W
Height :
20.7mm
Turn-Off Delay Time :
70 ns
Rise Time :
5ns
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-220
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Factory Lead Time :
18 Weeks
Max Junction Temperature (Tj) :
150°C
Voltage - Rated DC :
560V
Drain to Source Voltage (Vdss) :
500V
Drain to Source Resistance :
850mOhm
Lead Free :
Contains Lead
Continuous Drain Current (ID) :
4.5A
Datasheets
SPP04N50C3XKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPP04N50C3XKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Package / Case:TO-220, SPP04N50C3XKSA1 pinout, SPP04N50C3XKSA1 datasheet PDF, SPP04N50C3XKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPP04N50C3XKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



500V TO-220

SPP04N50C3XKSA1 Overview


A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.5A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 850mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.

SPP04N50C3XKSA1 Features


a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


SPP04N50C3XKSA1 Applications


There are a lot of Infineon Technologies
SPP04N50C3XKSA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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