SPB80P06PGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

175°C

Current Rating :

-80A

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Qualification Status :

Not Qualified

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Height :

4.4mm

Terminal Finish :

Tin (Sn)

Threshold Voltage :

-3V

Power Dissipation :

340W

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Power Dissipation-Max :

340W Tc

Rds On (Max) @ Id, Vgs :

23m Ω @ 64A, 10V

Pbfree Code :

No

Reach Compliance Code :

not_compliant

FET Type :

P-Channel

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

30 ns

Turn On Delay Time :

24 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-60V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 5.5mA

Input Capacitance (Ciss) (Max) @ Vds :

5033pF @ 25V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

JESD-30 Code :

R-PSSO-G2

Max Dual Supply Voltage :

-60V

Number of Channels :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

60V

Pin Count :

4

Series :

SIPMOS®

Rise Time :

18ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Number of Pins :

3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Voltage - Rated DC :

-60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1999

Continuous Drain Current (ID) :

-80A

Turn-Off Delay Time :

56 ns

ECCN Code :

EAR99

Vgs (Max) :

±20V