SPB80N04S2-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

TIN LEAD

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 80A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

Drain-source On Resistance-Max :

0.0034Ohm

Vgs (Max) :

±20V

Voltage - Rated DC :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6980pF @ 25V

Current Rating :

80A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

810 mJ

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e0

Terminal Position :

Single

Lead Free :

Contains Lead

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

320A