SPB80N03S2-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mount :

Surface Mount

Series :

OptiMOS™

Continuous Drain Current (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Voltage - Rated DC :

30V

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

810 mJ

Lead Free :

Contains Lead

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 80A, 10V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Current Rating :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Published :

2003

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain-source On Resistance-Max :

0.0031Ohm

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

320A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

220

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

ECCN Code :

EAR99