SPB80N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

220

Drain-source On Resistance-Max :

0.024Ohm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

FET Type :

N-Channel

Published :

2002

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

700 mJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

14m Ω @ 58A, 10V

Mount :

Surface Mount

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

80A

Voltage - Rated DC :

100V

Lead Free :

Contains Lead

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 2mA

Continuous Drain Current (ID) :

80A

Power Dissipation-Max :

250W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Qualification Status :

Not Qualified

Pin Count :

4

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

-55°C~175°C TJ

Series :

SIPMOS®