SPB80N06S2L-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

320A

Vgs (Max) :

±20V

Published :

2003

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

80A

ECCN Code :

EAR99

Pin Count :

4

Mount :

Surface Mount

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

370 mJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 52A, 10V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

190W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0113Ohm

Current Rating :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

55V

Vgs(th) (Max) @ Id :

2V @ 125μA

Operating Temperature :

-55°C~175°C TJ