SPB18P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.13Ohm

Qualification Status :

Not Qualified

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e0

FET Type :

P-Channel

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

220

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

18.7A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Power Dissipation-Max :

81.1W Ta

Avalanche Energy Rating (Eas) :

151 mJ

Pulsed Drain Current-Max (IDM) :

74.8A

Current Rating :

-18.6A

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

Lead Free :

Contains Lead

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

18.7A Ta

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Series :

SIPMOS®

Pin Count :

4

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-60V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

JESD-30 Code :

R-PSSO-G2