SPB100N03S2L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2003

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

Power Dissipation-Max :

300W Tc

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

100A

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Terminal Form :

Gull wing

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0034Ohm

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

ECCN Code :

EAR99

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

810 mJ

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current Rating :

100A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Voltage - Rated DC :

30V

Pin Count :

4

Vgs (Max) :

±20V

JESD-609 Code :

e0