SPB100N03S2-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.003Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Published :

2003

Series :

OptiMOS™

Current Rating :

100A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

30V

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

40ns

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

810 mJ