SPB08P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Series :

SIPMOS®

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

220

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Published :

2006

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8.8A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Rds On (Max) @ Id, Vgs :

300m Ω @ 6.2A, 10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

70 mJ

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-8.8A

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.3Ohm

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e0

Power Dissipation-Max :

42W Tc

Voltage - Rated DC :

-60V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

35.32A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

4

HTS Code :

8541.29.00.95

FET Type :

P-Channel

Qualification Status :

Not Qualified