SPB02N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Mount :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Turn-Off Delay Time :

68 ns

Drain-source On Resistance-Max :

3Ohm

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

1.8A

Published :

2005

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

25W

Vgs(th) (Max) @ Id :

3.9V @ 80µA

RoHS Status :

Non-RoHS Compliant

Rise Time :

3ns

Pulsed Drain Current-Max (IDM) :

5.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Pin Count :

4

Vgs (Max) :

±20V

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

50 mJ

Terminal Position :

Single

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Terminations :

2

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

650V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

6 ns

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

25W Tc